Robert dennard biography
- Robert Heath Dennard (September 5, 1932 – April 23, 2024) was an American electrical engineer and inventor.
- Robert H. Dennard was an American engineer credited with the invention of the one-transistor cell for dynamic random-access memory (DRAM).
- Born in 1932 in Terrell, Texas, Dennard spent his early years on a farm with no electricity, attending classes in a one-room schoolhouse.
- •
About Robert H. Dennard
Robert H. Dennard was born in Terrell, TX, in 1932. He received the B.S. and M.S. Degrees in electrical engineering from Southern Methodist University, Dallas, TX, in 1954 and 1956 respectively, and the Ph.D. Degree from Carnegie Institute of Technology, Pittsburgh, PA in 1958. He then joined IBM Research Division where his early experience included the study of new digital devices and circuits for logic and memory applications, and the development of advanced data communication techniques.
Since 1963 Dr. Dennard has been at the IBM Thomas J. Watson Research Center, Yorktown Heights, NY, where he has been involved in microelectronics research and development from the early days onward. His primary work has been in MOS transistors and integrated digital circuits using them. In 1967 he invented the dynamic RAM memory cell used universally in computers today. With coworkers he developed the concept of MOS transistor scaling in 1972, which is often cited as a guiding principle for microelectronics. He was appointed an IBM Fellow in 1979. He has contributed
- •
Robert H. Dennard facts for kids
Quick facts for kids Robert H. Dennard | |
|---|---|
| Born | (1932-09-05)September 5, 1932 Terrell, Texas, U.S. |
| Died | April 23, 2024(2024-04-23) (aged 91) Croton on Hudson, New York, U.S. |
| Known for | Inventing DRAM, Dennard scaling |
| Awards | Harvey Prize (1990) IEEE Edison Medal (2001) IEEE Medal of Honor (2009) Kyoto Prize (2013) Robert N. Noyce Award (2019) |
| Scientific career | |
| Thesis | Behavior of the ferroresonant series circuit containing a square-loop reactor(1958) |
| Doctoral advisor | Leo A. Finzi |
Robert Heath Dennard (September 5, 1932 – April 23, 2024) was an American electrical engineer and inventor.
Biography
Dennard was born in Terrell, Texas. He received his B.S. and M.S. degrees in Electrical Engineering from Southern Methodist University, Dallas, in 1954 and 1956, respectively. He earned a Ph.D. from Carnegie Institute of Technology in Pittsburgh, Pennsylvania, in 1958. His professional career was spent as a researcher for International Business Machines.
In 1966 he invented the one transistor memory cell c
- •
Biography
In his remarkable career at IBM, Robert H. Dennard has played a key role in two of the most groundbreaking innovations of the microelectronics industry. His work on the one-transistor memory cell led the way to readily available, inexpensive, high-density memory, which has transformed the industry Further, the principles he helped to develop for scaling MOSFET devices are so ubiquitous that they are now commonly referred to simply as "the scaling laws."
Dennard joined the IBM Research Division in 1958, where his early experience included the study of new devices and circuits for logic and memory applications, and the development of advanced data communication techniques. Since joining the IBM Thomas J. Watson Research Center, in Yorktown Heights, New York, in 1963 he has been involved in microelectronics research and development. His primary work there has been in MOSFETs and integrated digital circuits that use them. His accomplishments include pioneering the dynamic RAM memory cell used in most computers today, and playing a key role in the development of the concep
Copyright ©mobthaw.pages.dev 2025